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| savantic semiconductor product specification silicon npn power transistors 2SD198 description with to-3 package high breakdown voltage applications voltage regulator inverters switching mode power supply pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 6 v i c collector current 1 a p c collector power dissipation t c =75 25 w t j junction temperature 165 t stg storage temperature -55~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD198 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =1.0a; i b =0.1a 1.0 v v besat base-emitter saturation voltage i c =1.0a; i b =0.1a 1.5 v i cbo collector cut-off current v cb =300v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.1a ; v ce =5v 30 300 f t transition frequency i c =0.5a ; v ce =10v 25 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SD198 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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